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Fast joint EELS/EDS color map across a 32 nm transistor device

Methods

probe-corrected Jeol ARM 200 TEM/STEM microscope

C-FEG emission gun

GIF Quantum® ER system

Jeol Centurio SDD EDS detector (0.98 sr)

O K at 532 eV (red); Ti L at 456 eV (green); Ni L at 855 eV (light blue); N K at 401 eV (yellow); Hf M at 1662 eV (purple)

voltage: 200 kV

data taken in STEM mode

EELS core-loss spectrum (300 – 2300 eV): 1.5 ms

EDS spectrum (0 – 20 keV): 1.5 ms

d
ataset size: 256 x 256 pixels

t
otal exposure time: just over 2 min